The SI1900DL-T1 is a dual N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 590mA and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 480mR and a maximum power dissipation of 270mW. It is available in a 2-pin SOT-363-6 package.
PackageSOT-363-6
PolarityN-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1900DL-T1 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 590mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 480mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Polarity | N-CHANNEL |
| Power Dissipation | 270mW |
| RoHS Compliant | No |
| Series | SI1 |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000265oz |
| Width | 1.25mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI1900DL-T1 Datasheet
Download the complete datasheet for Vishay SI1900DL-T1 to view detailed technical specifications.
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