Dual N-channel JFET for general-purpose small signal applications. Features 20V drain-source voltage, 660mA continuous drain current, and 385mΩ drain-source on-resistance. Operates with a gate-source voltage up to 12V and a nominal Vgs of 600mV. Includes 10ns turn-on and turn-off delay times, with a 16ns fall time. Surface mountable in a 6-pin SC package, this RoHS compliant component offers a maximum power dissipation of 270mW.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1902DL-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
660mA
Drain to Source Resistance
385mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
385MR
Fall Time
16ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
270mW
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
270mW
Radiation Hardening
No
Rds On Max
385mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
Weight
0.000265oz
Width
1.25mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1902DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1902DL-T1-E3 to view detailed technical specifications.
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