P-channel, dual-element, small-signal MOSFET designed for general-purpose applications. Features a continuous drain current of 570mA and a drain-source breakdown voltage of 8V. Offers a maximum drain-source on-resistance of 600mΩ. Operates within a temperature range of -55°C to 150°C and is housed in a 6-pin SC package for surface mounting. RoHS compliant and available on tape and reel.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1905DL-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 570mA |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1905DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1905DL-T1-E3 to view detailed technical specifications.
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