P-channel, dual-element, small-signal MOSFET designed for general-purpose applications. Features a continuous drain current of 570mA and a drain-source breakdown voltage of 8V. Offers a maximum drain-source on-resistance of 600mΩ. Operates within a temperature range of -55°C to 150°C and is housed in a 6-pin SC package for surface mounting. RoHS compliant and available on tape and reel.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
Power270mW
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Technical Specifications
Vishay SI1905DL-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
570mA
Drain to Source Breakdown Voltage
8V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
600mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
270mW
Mount
Surface Mount
Nominal Vgs
-450mV
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
270mW
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
10ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI1905DL-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1905DL-T1-E3 to view detailed technical specifications.
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