P-channel enhancement mode power MOSFET, dual configuration, featuring a 20V drain-source voltage and 1.3A continuous drain current. This surface-mount transistor is housed in a compact 6-pin SC-70 (MO-203AB) plastic package with gull-wing leads, measuring 2mm x 1.25mm x 1mm. Key electrical characteristics include a maximum gate-source voltage of ±8V and a low on-resistance of 490mOhm at 4.5V Vgs. Operating temperature range spans from -55°C to 150°C.
PackageSC-70
MountingSurface Mount
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Technical Specifications
Vishay Si1967DH technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SC |
| Package/Case | SC-70 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MO-203AB |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 1.3A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 2.6@8V|[email protected]nC |
| Typical Input Capacitance @ Vds | 110@10VpF |
| Maximum Power Dissipation | 740mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si1967DH Datasheet
Download the complete datasheet for Vishay Si1967DH to view detailed technical specifications.
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