P-channel MOSFET featuring 20V drain-source voltage and 1.3A continuous drain current. Offers low 490mΩ drain-source resistance and fast switching speeds with 12ns turn-on and 15ns turn-off delay times. Designed for surface mount applications in a compact SC70-6 package, operating from -55°C to 150°C with 1.25W maximum power dissipation.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI1967DH-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Resistance | 490mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 110pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 490mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000988oz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1967DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1967DH-T1-E3 to view detailed technical specifications.
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