Dual N-channel MOSFET, 20V Drain-Source Breakdown Voltage (Vdss), 1.3A Continuous Drain Current (ID), and 168mΩ Max Drain-Source On Resistance (Rds On). Features include 8V Gate-to-Source Voltage (Vgs), 110pF Input Capacitance, and 740mW Max Power Dissipation. Operates from -55°C to 150°C, with fast switching times including 8ns Turn-On Delay and 20ns Fall Time. Surface mountable in an SC package, this RoHS compliant component is supplied on tape and reel.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Vishay SI1988DH-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 168mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 168mR |
| Fall Time | 20ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 110pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 168mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1988DH-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1988DH-T1-E3 to view detailed technical specifications.
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