N-channel MOSFET, surface mount, SOT-23-3 package. Features 30V drain-source voltage, 3.6A continuous drain current, and 68mΩ maximum drain-source on-resistance. Operates with a 12V gate-source voltage and offers fast switching with 10ns turn-on delay and 11ns fall time. Maximum power dissipation is 1.7W, with operating temperatures from -55°C to 150°C. RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2300DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 68MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.12mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 68mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2300DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2300DS-T1-GE3 to view detailed technical specifications.
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