N-channel MOSFET, surface mount, SOT-23-3 package. Features 30V drain-source voltage, 3.6A continuous drain current, and 68mΩ maximum drain-source on-resistance. Operates with a 12V gate-source voltage and offers fast switching with 10ns turn-on delay and 11ns fall time. Maximum power dissipation is 1.7W, with operating temperatures from -55°C to 150°C. RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2300DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
68MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
12V
Height
1.12mm
Input Capacitance
320pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
68mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI2300DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2300DS-T1-GE3 to view detailed technical specifications.
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