Vishay
SI2301ADS-T1-E3
Small Signal Field-Effect Transistor, 1.75A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3
Small Signal Field-Effect Transistor, 1.75A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3
PackageSOT-23-3
PolarityP-CHANNEL
Power900mW
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Technical Specifications
Vishay SI2301ADS-T1-E3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 900mW |
| RoHS Compliant | No |
| Series | SI2 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI2301ADS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2301ADS-T1-E3 to view detailed technical specifications.
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