P-channel, small-signal MOSFET for general-purpose applications. Features a -20V drain-to-source voltage and 3.1A continuous drain current. Offers low on-resistance of 112mΩ and fast switching speeds with turn-on delay of 11ns and fall time of 35ns. Packaged in a compact SOT-23-3 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2301CDS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.1A
Drain to Source Resistance
112mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
35ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
405pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
112mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2301CDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2301CDS-T1-E3 to view detailed technical specifications.
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