N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a continuous drain current of 2.1A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source resistance (Rds On Max) of 60mR. This surface mount device is housed in a SOT-23-3 package, measuring 3.04mm in length, 1.4mm in width, and 1.02mm in height. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 900mW.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power900mW
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Technical Specifications
Vishay SI2302ADS-T1 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.1A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
20V
Fall Time
55ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
300pF
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
900mW
Rds On Max
60mR
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI2302ADS-T1 Datasheet
Download the complete datasheet for Vishay SI2302ADS-T1 to view detailed technical specifications.
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