N-Channel Silicon Metal-oxide Semiconductor FET, TO-236 package, offering 20V Drain to Source Breakdown Voltage and 2.1A Continuous Drain Current. Features 60mΩ Drain to Source Resistance at a nominal Vgs of 950mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 700mW. This surface mount device includes a 1-element, 1-channel configuration with fast switching times, including a 7ns turn-on delay and 16ns turn-off delay.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power700mW
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Technical Specifications
Vishay SI2302ADS-T1-E3 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
2.1A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
55ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
300pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
950mV
Number of Channels
1
Number of Elements
1
Output Power
700mW
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
700mW
Rds On Max
60mR
Reach SVHC Compliant
No
Termination
SMD/SMT
Threshold Voltage
950mV
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2302ADS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2302ADS-T1-E3 to view detailed technical specifications.
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