SI2302ADS-T1-E3

N-Channel Silicon Metal-oxide Semiconductor FET, TO-236 package, offering 20V Drain to Source Breakdown Voltage and 2.1A Continuous Drain Current. Features 60mΩ Drain to Source Resistance at a nominal Vgs of 950mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 700mW. This surface mount device includes a 1-element, 1-channel configuration with fast switching times, including a 7ns turn-on delay and 16ns turn-off delay.