N-channel Power MOSFET, TrenchFET technology, 20V drain-source voltage, 2.6A continuous drain current. Features a maximum drain-source resistance of 57 mOhm at 4.5V gate-source voltage and a typical gate charge of 3.5 nC at 4.5V. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads for surface mounting. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 860 mW.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Vishay Si2302CDS technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3.04(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1.02(Max)
Seated Plane Height (mm)
1.12(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
2.6A
Maximum Gate Threshold Voltage
0.85V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Maximum Power Dissipation
860mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
40pF
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si2302CDS Datasheet
Download the complete datasheet for Vishay Si2302CDS to view detailed technical specifications.
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