
N-channel Power MOSFET, TrenchFET technology, 20V drain-source voltage, 2.6A continuous drain current. Features a maximum drain-source resistance of 57 mOhm at 4.5V gate-source voltage and a typical gate charge of 3.5 nC at 4.5V. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads for surface mounting. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 860 mW.
Vishay Si2302CDS technical specifications.
Download the complete datasheet for Vishay Si2302CDS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.