N-channel Power MOSFET, TrenchFET technology, 20V drain-source voltage, 2.6A continuous drain current. Features a maximum drain-source resistance of 57 mOhm at 4.5V gate-source voltage and a typical gate charge of 3.5 nC at 4.5V. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads for surface mounting. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 860 mW.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Vishay Si2302CDS technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3.04(Max) |
| Package Width (mm) | 1.4(Max) |
| Package Height (mm) | 1.02(Max) |
| Seated Plane Height (mm) | 1.12(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 2.6A |
| Maximum Gate Threshold Voltage | 0.85V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Power Dissipation | 860mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 40pF |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si2302CDS Datasheet
Download the complete datasheet for Vishay Si2302CDS to view detailed technical specifications.
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