N-channel MOSFET, designed for general-purpose small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 2.6A. Offers a low drain-source on-resistance (Rds On) of 57mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 710mW. Packaged in a compact SOT-23-3 surface-mount case, this component is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power710mW
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Technical Specifications
Vishay SI2302CDS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.6A
Drain to Source Resistance
57mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
57mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
112pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
710mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
710mW
Radiation Hardening
No
Rds On Max
57mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2302CDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2302CDS-T1-E3 to view detailed technical specifications.
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