P-Channel Silicon MOSFET, designed for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (ID) of 1.49A. Offers a low Drain-to-Source On-Resistance (Rds On Max) of 200mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW. Packaged in a SOT-23-3 surface mount configuration, ideal for compact designs.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power900mW
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Technical Specifications
Vishay SI2303BDS-T1 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.49A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
30V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
180pF
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
900mW
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
10ns
Turn-On Delay Time
55ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI2303BDS-T1 Datasheet
Download the complete datasheet for Vishay SI2303BDS-T1 to view detailed technical specifications.
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