P-channel, small-signal MOSFET for general-purpose applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 1.3A. Offers a low drain-source on-resistance of 200mΩ at a nominal gate-source voltage of -3V. Packaged in a compact SOT-23 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
PackageSOT-23
Voltage30V
Current164A
MountingSurface Mount
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Technical Specifications
Vishay SI2303BDS-T1-E3 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
1.3A
Current
164A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
200mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
0.04inch
Input Capacitance
180pF
Lead Free
Lead Free
Length
0.119inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
-3V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
700mW
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-3V
Turn-Off Delay Time
10ns
Turn-On Delay Time
55ns
Voltage
30V
Width
0.055inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI2303BDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2303BDS-T1-E3 to view detailed technical specifications.
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