P-channel, small-signal MOSFET in a SOT-23-3 package. Features a continuous drain current of 1.9A, drain-source voltage of 30V, and a maximum drain-source on-resistance of 190mR. Operates with a gate-to-source voltage up to 20V and offers a maximum power dissipation of 2.3W. This surface-mount device boasts a fall time of 37ns and turn-off delay of 12ns, with input capacitance at 155pF. RoHS compliant and suitable for general-purpose applications.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.3W
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Technical Specifications
Vishay SI2303CDS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.9A
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
190MR
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
155pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.3W
Radiation Hardening
No
Rds On Max
190mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
12ns
Turn-On Delay Time
36ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2303CDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2303CDS-T1-E3 to view detailed technical specifications.
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