N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 3.3A continuous drain current. This single-element transistor offers a low 60mOhm drain-source resistance at 10V gate-source voltage. Packaged in a 3-pin SOT-23 (TO-236AB) surface-mount plastic housing with gull-wing leads, it supports efficient PCB mounting. Key electrical characteristics include typical gate charge values of 4.5nC at 10V and 235pF input capacitance at 15V drain-source voltage. Maximum power dissipation is 1100mW, with an operating temperature range from -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Vishay Si2304DDS technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3.04(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1.02(Max)
Seated Plane Height (mm)
1.12(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
3.3A
Maximum Drain Source Resistance
60@10VmOhm
Typical Gate Charge @ Vgs
4.5@10V|[email protected]nC
Typical Gate Charge @ 10V
4.5nC
Typical Input Capacitance @ Vds
235@15VpF
Maximum Power Dissipation
1100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
18612
EU RoHS
No
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si2304DDS Datasheet
Download the complete datasheet for Vishay Si2304DDS to view detailed technical specifications.
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