N-channel MOSFET, surface mount, TO-236 (SOT-23-3) package. Features 30V drain-source breakdown voltage, 3.16A continuous drain current, and 47mΩ maximum drain-source on-resistance. Operates with a 3V threshold voltage and 12ns fall time. Maximum power dissipation is 750mW, with operating temperatures from -55°C to 150°C. RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2306BDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.16A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
47mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
47MR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
305pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
47mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
14ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2306BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2306BDS-T1-GE3 to view detailed technical specifications.
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