Vishay
SI2306DS-T1-E3
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
PackageSOT-23-3
PolarityN-CHANNEL
Power1.25W
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Technical Specifications
Vishay SI2306DS-T1-E3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| RoHS Compliant | Yes |
| Series | SI2 |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2306DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2306DS-T1-E3 to view detailed technical specifications.
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