N-channel MOSFET, TO-236 package, offering 60V drain-to-source breakdown voltage and 1.9A continuous drain current. Features a low 156mΩ drain-to-source on-resistance and 1V threshold voltage. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 1.66W. Ideal for general-purpose small signal applications, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.09W
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Technical Specifications
Vishay SI2308BDS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.9A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
156mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
156MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
190pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.66W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.09W
Radiation Hardening
No
Rds On Max
156mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
11ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2308BDS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2308BDS-T1-E3 to view detailed technical specifications.
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