P-channel MOSFET in SOT-23-3 package, featuring 8V drain-source voltage and 3A continuous drain current. Offers low 45mΩ drain-source resistance and 8V gate-source voltage. Designed for surface mounting with fast switching times, including 18ns turn-on delay and 45ns fall time. Maximum power dissipation is 710mW, operating from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2311DS-T1-E3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 970pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2311DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2311DS-T1-E3 to view detailed technical specifications.
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