N-channel, small-signal MOSFET transistor designed for general-purpose applications. Features a maximum continuous drain current of 3900 mA and a drain-source voltage rating of 20 V. Packaged in a TO-236 (SOT-23) small outline package with 3 terminals. Operates up to a maximum junction temperature of 150°C and is halogen-free and RoHS compliant.
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Technical Specifications
Vishay SI2312BDS-T1-GE3 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay SI2312BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2312BDS-T1-GE3 to view detailed technical specifications.
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