N-channel MOSFET with 20V drain-source voltage and 3.9A continuous drain current. Features low 31mΩ drain-source on-resistance at 4.5V gate-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 750mW. Packaged in a SOT-23-3 surface-mount case, this component offers fast switching with turn-on delay of 9ns and fall time of 30ns.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI2312BDST1GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 31mR |
| Dual Supply Voltage | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | 8V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 8V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2312BDST1GE3 Datasheet
Download the complete datasheet for Vishay SI2312BDST1GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.