P-channel, small-signal MOSFET for general-purpose applications. Features a 3A continuous drain current and a -12V drain-to-source voltage. Offers a low 50mΩ maximum drain-to-source resistance. Packaged in a SOT-23-3 surface-mount case, this component operates from -55°C to 150°C and is RoHS compliant.
PackageSOT-23-3
Voltage12V
Current3A
MountingSurface Mount
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Technical Specifications
Vishay SI2315BDS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3A |
| Current | 3A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 715pF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 15ns |
| Voltage | 12V |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2315BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2315BDS-T1-GE3 to view detailed technical specifications.
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