N-channel MOSFET, surface mount, in a SOT-23-3 package. Features 30V drain-source voltage, 4.5A continuous drain current, and 50mΩ drain-source on-resistance. Operates from -55°C to 150°C with a 3V threshold voltage. Includes 20V gate-to-source voltage, 1.25W max power dissipation, and 350pF input capacitance. RoHS compliant with fast switching times including 20ns turn-on delay and 11ns turn-off delay.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2316BDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
50MR
Fall Time
65ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
11ns
Turn-On Delay Time
20ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2316BDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2316BDS-T1-GE3 to view detailed technical specifications.
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