N-channel MOSFET, TO-236 package, ideal for general-purpose small signal applications. Features a continuous drain current of 3A and a drain-source breakdown voltage of 40V. Offers a low drain-source on-resistance of 45mΩ and a threshold voltage of 3V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 750mW. This surface-mount component is RoHS compliant and supplied on tape and reel.
PackageTO-236
MountingSurface Mount
PolarityN-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2318DS-T1-E3 technical specifications.
General
Package/Case
TO-236
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
45mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
750mW
Rds On Max
45mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
20ns
Turn-On Delay Time
5ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2318DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2318DS-T1-E3 to view detailed technical specifications.
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