N-channel MOSFET in SOT-23-3 package, featuring 40V drain-source voltage and 3A continuous drain current. Offers low 45mΩ drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 750mW and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 5ns and fall time of 15ns.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2318DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 45MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2318DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2318DS-T1-GE3 to view detailed technical specifications.
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