P-channel, small-signal MOSFET for general-purpose applications. Features a continuous drain current of 2.3A and a drain-to-source voltage of -40V. Offers a low on-resistance of 82mΩ at a nominal gate-source voltage of -3V. Packaged in a SOT-23-3 surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching characteristics with a turn-on delay of 7ns and fall time of 25ns. RoHS compliant and halogen-free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2319DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
2.3A
Drain to Source Resistance
82mR
Drain to Source Voltage (Vdss)
-40V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
470pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
82mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
25ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI2319DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2319DS-T1-GE3 to view detailed technical specifications.
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