P-channel, small-signal MOSFET for general-purpose applications. Features a continuous drain current of 2.3A and a drain-to-source voltage of -40V. Offers a low on-resistance of 82mΩ at a nominal gate-source voltage of -3V. Packaged in a SOT-23-3 surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 750mW. Includes fast switching characteristics with a turn-on delay of 7ns and fall time of 25ns. RoHS compliant and halogen-free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2319DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 470pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2319DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2319DS-T1-GE3 to view detailed technical specifications.
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