P-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 2.9A Continuous Drain Current. Features 57mΩ Max Drain-Source On Resistance, 715pF Input Capacitance, and 35ns Fall Time. Operates from -55°C to 150°C with 710mW Max Power Dissipation. Surface mount SOT-23-3 package, RoHS compliant, and Lead Free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power710mW
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Technical Specifications
Vishay SI2321DS-T1-E3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 57mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 715pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 710mW |
| Radiation Hardening | No |
| Rds On Max | 57mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2321DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2321DS-T1-E3 to view detailed technical specifications.
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