SI2321DS-T1-GE3

MOSFET P-CH 20V 2.9A SOT-23

PackageSOT-23-3

MountingSurface Mount

PolarityP-CHANNEL

Power710mW

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Vishay SI2321DS-T1-GE3 technical specifications.

Package/Case	SOT-23-3
Continuous Drain Current (ID)	2.9A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	57mR
Drain to Source Voltage (Vdss)	20V
Fall Time	40ns
Gate to Source Voltage (Vgs)	8V
Input Capacitance	715pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	710mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	710mW
Radiation Hardening	No
Rds On Max	57mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	60ns
Turn-On Delay Time	15ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.