P-channel MOSFET, general purpose small signal transistor, featuring a -20V Drain-Source Voltage (Vdss) and -6A Continuous Drain Current (ID). Offers a low Drain-Source On Resistance (Rds On) of 32mR. Packaged in a compact SOT-23-3 surface mount case, this device operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 2.5W. Includes fast switching characteristics with a 15ns turn-on delay and 12ns fall time. RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2323CDS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
-6A
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
39mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
1.09nF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-400mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
39mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2323CDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2323CDS-T1-GE3 to view detailed technical specifications.
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