P-channel MOSFET, 20V drain-source voltage, 3.7A continuous drain current, and 39mΩ Rds On. Features a maximum power dissipation of 750mW and operates across a temperature range of -55°C to 150°C. This surface-mount component is housed in a SOT-23-3 package with a fall time of 43ns and turn-on delay of 25ns.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Vishay SI2323DS-T1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 1.02nF |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 39mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI2323DS-T1 Datasheet
Download the complete datasheet for Vishay SI2323DS-T1 to view detailed technical specifications.
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