P-channel, general-purpose small-signal MOSFET with a continuous drain current of 530mA and a drain-source voltage of -150V. Features a maximum drain-source on-resistance of 1.2 Ohms and a gate-source voltage of 20V. This surface-mount component, housed in a SOT-23-3 package, offers a maximum power dissipation of 750mW and operates within a temperature range of -55°C to 150°C. Input capacitance is 510pF.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2325DS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
530mA
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
-150V
Drain-source On Resistance-Max
1.2R
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
510pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-4.5V
Weight
0.050717oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI2325DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2325DS-T1-E3 to view detailed technical specifications.
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