SI2331DS-T1-GE3

Name: SI2331DS-T1-GE3 Vishay
Brand: Vishay
SKU: SI2331DS-T1-GE3

MOSFET P-CH 12V 3.2A SOT23-3

PackageTO-236-3

Resistance0.048R

MountingSurface Mount

PolarityP-CHANNEL

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Vishay SI2331DS-T1-GE3 technical specifications.

Package/Case	TO-236-3
Continuous Drain Current (ID)	3.2A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	48mR
Drain to Source Voltage (Vdss)	12V
Gate to Source Voltage (Vgs)	8V
Input Capacitance	780pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	710mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	710mW
Rds On Max	48mR
Resistance	0.048R
RoHS Compliant	No
Series	TrenchFET®
Turn-Off Delay Time	65ns

RoHS	Not Compliant

This datasheet cannot be embedded due to technical restrictions.