P-channel MOSFET, 12V drain-source voltage, 3.2A continuous drain current, and 51mΩ maximum drain-source on-resistance. Features a SOT-23-3 surface mount package, 750mW power dissipation, and operates within a -55°C to 150°C temperature range. Includes 1.225nF input capacitance, 13ns turn-on delay, 50ns turn-off delay, and 15ns fall time. RoHS compliant and lead-free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2335DS-T1-E3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.2A
Drain to Source Resistance
51mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
51mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
1.225nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
750mW
Mount
Surface Mount
Nominal Vgs
-450mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
750mW
Radiation Hardening
No
Rds On Max
51mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
50ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI2335DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2335DS-T1-E3 to view detailed technical specifications.
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