P-channel MOSFET, 12V drain-source voltage, 3.2A continuous drain current, and 51mΩ maximum drain-source on-resistance. Features a SOT-23-3 surface mount package, 750mW power dissipation, and operates within a -55°C to 150°C temperature range. Includes 1.225nF input capacitance, 13ns turn-on delay, 50ns turn-off delay, and 15ns fall time. RoHS compliant and lead-free.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Vishay SI2335DS-T1-E3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 51mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.225nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| Rds On Max | 51mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2335DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2335DS-T1-E3 to view detailed technical specifications.
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