SI2335DS-T1-GE3

Name: SI2335DS-T1-GE3 Vishay
Brand: Vishay
SKU: SI2335DS-T1-GE3

MOSFET 12V 4.0A 1.25W 51mohm @ 4.5V

PackageSOT-23-3

MountingSurface Mount

PolarityP-CHANNEL

Power750mW

Quick Jump:

Vishay SI2335DS-T1-GE3 technical specifications.

Package/Case	SOT-23-3
Continuous Drain Current (ID)	3.2A
Drain to Source Breakdown Voltage	12V
Drain to Source Resistance	51mR
Drain to Source Voltage (Vdss)	12V
Gate to Source Voltage (Vgs)	8V
Input Capacitance	1.225nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	750mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	750mW
Rds On Max	51mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	50ns
Turn-On Delay Time	13ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.