N-Channel MOSFET, SOT-23 package, featuring 30V Drain-to-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Offers low 42mΩ Drain-to-Source Resistance (Rds On Max) and 1.8W Max Power Dissipation. Designed for surface mount applications with a 400mV nominal Gate-to-Source Voltage (Vgs) and 400mV Threshold Voltage. Includes fast switching characteristics with 6ns Turn-On Delay Time and 10ns Fall Time. RoHS compliant and operates within a -55°C to 150°C temperature range.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power1.25W
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Technical Specifications
Vishay SI2336DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 400mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2336DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2336DS-T1-GE3 to view detailed technical specifications.
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