N-Channel MOSFET, SOT-23 package, featuring 30V Drain-to-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Offers low 42mΩ Drain-to-Source Resistance (Rds On Max) and 1.8W Max Power Dissipation. Designed for surface mount applications with a 400mV nominal Gate-to-Source Voltage (Vgs) and 400mV Threshold Voltage. Includes fast switching characteristics with 6ns Turn-On Delay Time and 10ns Fall Time. RoHS compliant and operates within a -55°C to 150°C temperature range.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power1.25W
Quick Jump:
Technical Specifications
Vishay SI2336DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
560pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
400mV
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.25W
Rds On Max
42mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
20ns
Turn-On Delay Time
6ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI2336DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2336DS-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
