N-CHANNEL MOSFET, SOT-23 package, offering 30V drain-source voltage and 6A continuous drain current. Features low 23mΩ drain-to-source resistance and 2.5W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with 3ns turn-on delay and 7ns fall time. Surface mountable and RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay Si2338DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 424pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay Si2338DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si2338DS-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
