P-channel MOSFET in SOT-23-3 package, featuring 30V drain-source voltage and 2.5A continuous drain current. Offers a low 72mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 710mW. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 15ns. Surface mountable with tape and reel packaging.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2341DS-T1-E3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 710mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.050717oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2341DS-T1-E3 Datasheet
Download the complete datasheet for Vishay SI2341DS-T1-E3 to view detailed technical specifications.
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