P-channel MOSFET with 20V drain-source voltage and 2.2A continuous drain current. Features a low 115mΩ maximum drain-source on-resistance at 4.5V Vgs. Surface mountable in a SOT-23-3 package, this component offers 1W maximum power dissipation and operates across a -55°C to 150°C temperature range. It is RoHS compliant and designed for efficient switching applications.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Vishay SI2351DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 115mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 115MR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 115mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2351DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2351DS-T1-GE3 to view detailed technical specifications.
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