N-channel silicon MOSFET for surface mounting in a TO-236 package. Features a continuous drain current of 4.3A, drain-to-source voltage of 40V, and a low Rds(on) of 51mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.7W. Includes fast switching characteristics with turn-on delay time of 10ns and fall time of 53ns. This component is RoHS compliant.
PackageTO-236
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI2356DS-T1-GE3 technical specifications.
General
| Package/Case | TO-236 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 53ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 51mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2356DS-T1-GE3 Datasheet
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