P-Channel MOSFET, SOT-23-3 package, featuring a -20V Drain-Source Voltage (Vdss) and 3.8A continuous drain current (ID). Offers a low 66mΩ maximum drain-source on-resistance (Rds On Max) at 4.5V gate-source voltage. This surface mount component boasts a 150°C maximum operating temperature and 1.7W maximum power dissipation, with fast switching times including an 8ns turn-on delay and 9ns fall time. Packaged on tape and reel, this RoHS compliant device is designed for efficient power management.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power960mW
Quick Jump:
Technical Specifications
Vishay SI2367DS-T1-GE3 technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
3.8A
Drain to Source Resistance
66mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
66MR
Fall Time
9ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
561pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
66mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
35ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI2367DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2367DS-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
