P-Channel MOSFET, SOT-23-3 package, featuring a -20V Drain-Source Voltage (Vdss) and 3.8A continuous drain current (ID). Offers a low 66mΩ maximum drain-source on-resistance (Rds On Max) at 4.5V gate-source voltage. This surface mount component boasts a 150°C maximum operating temperature and 1.7W maximum power dissipation, with fast switching times including an 8ns turn-on delay and 9ns fall time. Packaged on tape and reel, this RoHS compliant device is designed for efficient power management.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
Power960mW
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Technical Specifications
Vishay SI2367DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 66MR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 561pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 960mW |
| Radiation Hardening | No |
| Rds On Max | 66mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2367DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2367DS-T1-GE3 to view detailed technical specifications.
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