Vishay
SI2371EDS-T1-GE3
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2371EDS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -4.8A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 45mR |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 47ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2371EDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2371EDS-T1-GE3 to view detailed technical specifications.
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