P-channel MOSFET with 20V drain-source voltage and 8A continuous drain current. Features low 24mΩ drain-to-source resistance and 1.67nF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 4.2W. Packaged in a compact 6-TSOP surface-mount case, ideal for high-density applications.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3407DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 1.67nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 24mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 32ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI3407DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3407DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.