SI3410DV-T1-E3

N-CH MOSFET 30V 8A 19.5mR TSOP Surface Mount

N-channel MOSFET, 30V Vds, 8A continuous drain current, and 19.5mR Rds On. Features a 6-TSOP surface mount package with dimensions of 3.05mm length, 1.65mm width, and 1mm height. Operating temperature range from -55°C to 150°C, with a maximum power dissipation of 2W. Includes fast switching characteristics with 10ns turn-on delay and 8ns fall time.

PackageTSOP

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay SI3410DV-T1-E3 technical specifications.

General

Package/Case	TSOP
Continuous Drain Current (ID)	8A
Drain to Source Resistance	19.5mR
Drain to Source Voltage (Vdss)	30V
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	1.295nF
Length	3.05mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Nominal Vgs	3V
Number of Channels	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Rds On Max	19.5mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	3V
Turn-Off Delay Time	21ns
Turn-On Delay Time	10ns
Weight	0.000705oz
Width	1.65mm