N-channel power MOSFET with 30V drain-source voltage and 8A continuous drain current. Features low 19.5mΩ drain-to-source resistance and 2W maximum power dissipation. Operates from -55°C to 150°C, with a nominal gate-source voltage of 3V and a threshold voltage of 3V. Packaged in a TSOP surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 21ns and fall time of 9ns.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3410DV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
8A
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.295nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
19.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
20ns
Turn-On Delay Time
21ns
Weight
0.000705oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI3410DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3410DV-T1-GE3 to view detailed technical specifications.
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