N-channel MOSFET featuring a 30V drain-source breakdown voltage and 5A continuous drain current. This surface-mount component offers a low drain-source on-resistance of 28mΩ, with fast switching characteristics including a 7ns turn-on delay and 10ns fall time. Operating across a wide temperature range of -55°C to 150°C, it supports up to 1.14W of power dissipation. The device is packaged in a TSOP for tape and reel distribution.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3424DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3424DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3424DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
