N-channel small signal MOSFET for general-purpose applications. Features 100V drain-source voltage (Vdss) and 2.4A continuous drain current (ID). Offers low 170mR drain-to-source on-resistance (Rds On Max) and fast switching times with 9ns turn-on delay and 16ns turn-off delay. Packaged in a compact TSOP surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 1.14W. RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3430DV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.4A
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.14W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
170mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
16ns
Turn-On Delay Time
9ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3430DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3430DV-T1-GE3 to view detailed technical specifications.
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