P-channel MOSFET with 20V drain-source voltage and 4.3A continuous drain current. Features low 42mΩ drain-source on-resistance and 1.1W maximum power dissipation. Operates across a -55°C to 150°C temperature range, with fast switching times including 15ns turn-on delay. Packaged in TSOP for surface mounting, this RoHS compliant component is supplied on tape and reel.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3433BDV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 42mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 42mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -450mV |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3433BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3433BDV-T1-E3 to view detailed technical specifications.
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