P-channel, small-signal MOSFET transistor featuring a 38mΩ maximum drain-source on-resistance and a continuous drain current of 6A. This surface-mount device operates with a drain-source voltage of -20V and a nominal gate-source voltage of -1V, with a threshold voltage of -1V. It offers fast switching characteristics with a 20ns turn-on delay and 50ns turn-off delay, and an input capacitance of 1.3nF. Housed in a compact TSOP package, this RoHS compliant component is designed for general-purpose applications.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3433CDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 38MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 1.3nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3433CDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3433CDV-T1-GE3 to view detailed technical specifications.
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